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PD- 91833C
SMPS MOSFET
IRFP22N50A
HEXFET(R) Power MOSFET
Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current
VDSS
500V
RDS(on) max
0.23
ID
22A
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
22 14 88 277 2.2 30 4.8 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Typical SMPS Topologies
l l
Full Bridge Converters Power Factor Correction Boost
Notes
through
are on page 8
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1
12/15/99
IRFP22N50A
Static @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units Conditions 500 --- --- V VGS = 0V, ID = 250A --- 0.55 --- V/C Reference to 25C, ID = 1mA --- --- 0.23 VGS = 10V, ID = 13A 2.0 --- 4.0 V VDS = VGS, ID = 250A --- --- 25 VDS = 500V, VGS = 0V A --- --- 250 VDS = 400V, VGS = 0V, T J = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Min. 12 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 26 94 47 47 3450 513 27 4935 137 264 Max. Units Conditions --- S VDS = 50V, ID = 13A 120 ID = 22A 32 nC VDS = 400V 52 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 22A ns --- RG = 4.3 --- R D = 11,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
1180 22 28
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
--- 0.24 ---
Max.
0.45 --- 40
Units
C/W
Diode Characteristics
Min. Typ. Max. Units IS
ISM
VSD trr Qrr ton
Conditions D MOSFET symbol 22 --- --- showing the A G integral reverse 88 --- --- S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 22A, VGS = 0V --- 570 850 ns TJ = 25C, IF = 22A --- 6.1 9.2 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFP22N50A
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1
10
4.5V
0.1
4.5V
20s PULSE WIDTH TJ = 150 C
1 10 100
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
ID = 22A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 C
10
2.5
2.0
TJ = 25 C
1.5
1
1.0
0.5
0.1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFP22N50A
100000
VGS , Gate-to-Source Voltage (V)
10000
V GS C is s C rss C oss
= = = =
0V, f = 1M Hz C g s + C g d , Cd s S H O R T E D C gd C ds + C gd
20
ID = 22A VDS = 400V VDS = 250V VDS = 100V
16
C , C a pa c itan c e (p F )
C iss
1000
12
C oss
100
8
C rs s
10
4
1 1 10 100 1000
A
0 0 20 40 60
FOR TEST CIRCUIT SEE FIGURE 13
80 100 120
V D S , D rain-to-S ource V oltage (V )
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
10
I D , Drain Current (A)
TJ = 150 C
100 10us
TJ = 25 C
1
100us 10 1ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms
1000
10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFP22N50A
25
VDS VGS
RD
20
D.U.T.
+
RG
I D , Drain Current (A)
-VDD
15
10V
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP22N50A
1 5V
3000
EAS , Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
2500
VDS
L
D R IV E R
ID 9.8A 14A 22A
2000
RG
20V tp
D .U .T
IA S
+ V - DD
A
1500
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
1000
500
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
V D S av , A valanche Voltage (V )
640
630
620
Charge
610
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
600
590
50K 12V .2F .3F
580
D.U.T. + V - DS
570 0 4 8 12 16 20 24
A
VGS
3mA
I av , A valanche C urrent (A )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current
6
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IRFP22N50A
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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7
IRFP22N50A
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
3 .65 (.1 43 ) 3 .55 (.1 40 ) 0.25 (.0 1 0) M -A5 .50 (. 217 ) 2 0 .3 0 (.80 0) 1 9 .7 0 (.77 5) 1 2 3 -C14 .8 0 (.5 83 ) 14 .2 0 (.5 59 ) 4.3 0 (.1 70) 3.7 0 (.1 45)
LE AD A S SIG N MEN TS 1 2 3 4 GA TE DR AIN SO UR C E DR AIN
-DDBM 5 .3 0 (.2 09 ) 4 .7 0 (.1 85 ) 2 .5 0 (.08 9) 1 .5 0 (.05 9) 4
15 .90 (.6 26 ) 15 .30 (.6 02 ) -B-
2X
5.5 0 (.2 17) 4.5 0 (.1 77)
NO TES : 1 D IME N SION ING & TO LE R AN CING P E R A NS I Y14.5M, 1982. 2 C ON TR OLLIN G D IME N SIO N : IN CH . 3 C ON F OR MS TO JED E C OU TLIN E T O-247-A C .
2 .40 (. 094 ) 2 .00 (. 079 ) 2X 5.45 (.21 5) 2X
1 .40 (.0 56 ) 3X 1 .00 (.0 39 ) 0 .2 5 (.0 10 ) M 3 .40 (.13 3) 3 .00 (.11 8) C AS
0 .80 (.03 1) 3 X 0 .40 (.01 6) 2 .60 (.1 0 2) 2 .20 (.0 8 7)
TO-247AC Part Marking Information
E X A M P L E : T H IS IS A N IR F P E 3 0 W IT H A S S E M B L Y LOT C ODE 3A1Q
A
IN T E R N A T IO N A L R E C T IF I E R LOGO
PA R T NU M B E R IR F P E 30 3A1Q 9302 D ATE CO DE (Y Y W W ) Y Y = YE A R W W W EEK
A S SE M B L Y LOT CODE
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 4.87mH
RG = 25, IAS = 22A. (See Figure 12a)
ISD 22A, di/dt 190A/s, VDD V(BR)DSS,
TJ 150C
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 12/99
8
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